Pennsylvania, MALVERN — October 27, 2020 — A few days ago, Vishay Intertechnology, Inc. (NYSE stock code: VSH) announced the launch of a new 40 V n-channel MOSFET half-bridge power stage—SiZ240DT, which can be used to improve white goods and industrial, Power density and efficiency for medical and communications applications. Vishay Siliconix SiZ240DT integrates high-side and low-side MOSFETs in a small PowerPAIR® 3.3 mm x 3.3 mm monolithic package. The product of on-resistance and on-resistance and gate charge is an important factor of merit (FOM) for MOSFETs in power conversion applications. ) Reach the industry’s outstanding level.
The two TrenchFET® MOSFETs in the SiZ240DT are internally connected in a half-bridge configuration. The channel 1 MOSFET of the SiZ240DT is usually used as a control switch for a synchronous buck converter. The maximum on-resistance is 8.05 mΩ at 10 V and 12.25 mΩ at 4.5 V. Channel 2 MOSFET, usually used as a synchronous switch, with an on-resistance of 8.41 mΩ at 10 V and 13.30 mΩ at 4.5 V. These values are 16% lower than the next competitor. Combining the low gate charge of 6.9 nC (channel 1) and 6.5 nC (channel 2), the on-resistance and gate charge product FOM is 14% lower than the second-ranked device, helping to improve the efficiency of fast switching applications.
The dual MOSFET released a few days ago is 65% smaller than a dual device in a 6 mm x 5 mm package, and is currently one of the smallest integrated products on the market. In addition to being used for synchronous step-down, DC/DC conversion half-bridge power stage, the new device also provides designers with space-saving solutions, suitable for vacuum cleaners, drones, power tools, home/office automation and non-plant Motor control for embedded medical equipment, wireless chargers and switching power supplies for telecommunications equipment and servers.
The integrated MOSFET uses a wireless internal structure to minimize parasitic inductance to achieve high-frequency switching, thereby reducing the size of the magnetic device and the final design. Its optimized Qgd/Qgs ratio reduces noise and further enhances the switching characteristics of the device. SiZ240DT is 100% Rg and UIS tested, RoHS compliant and halogen-free.
Samples of the new dual MOSFET are now available and mass production has been achieved. The lead time for bulk orders is 12 weeks.
The Links: https://www.slw-ele.com/fz800r33kf2c.html“> FZ800R33KF2C DMF5010NBU-FW-BD
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